A universal method for in situ control of stoichiometry and termination of epitaxial perovskite films
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Researchers have developed a method for controlling the stoichiometry and termination of epitaxial perovskite films. The approach may involve layer-by-layer engineering and the use of buffer layers, such as SiO2, to influence film formation and electronic structure. The specifics of the method and its applications are being explored in various studies, including those focusing on different perovskite materials and substrate dependencies.
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