Researchers are exploring the use of graphene and hexagonal boron nitride (h-BN) heterostructures in the design of resistive random access memory (RRAM). The development of these heterostructures is part of a broader effort to advance memristor technology, which has potential applications in fields such as embedded systems, biomedical devices, and memory storage. Various studies are investigating the synthesis, mechanisms, and optimization of memristors based on two-dimensional materials like h-BN.