Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Nature·Sep 11

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1

Filamentary-based gradual dual resistive switching in the TiO

Nature·Apr 18

2

SKKU research team unravels the origin of stochasticity, a key to next-generation data security and computing

EurekAlert!·Mar 10

3

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Nature·Jan 28

4

Investigating the effect of electrical and thermal transport properties on oxide-based memristors performance and reliability

Nature·May 28

5

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Nature·Dec 13

6

Unveiling the hybrid filaments-induced forming-free resistive switching dynamics in Cu-doped oxygenated amorphous carbon-based memristors

Nature·May 2

7

Atomic View of Filament Growth in Electrochemical Memristive Elements

Nature·Aug 21

8

Ultra-fast switching memristors based on two-dimensional materials

Nature·Mar 14