Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
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Researchers have made advancements in the development of two-dimensional transistors, including the creation of single-crystalline metal-oxide dielectrics for top-gate 2D transistors. These developments may address challenges in 2D electronics and contribute to the creation of low-power-consumption field-effect transistors. The research appears to involve various approaches to improving dielectric materials and transistor design for potential use in future electronic devices.
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