Researchers are exploring methods to create atomically precise interfaces, with some studies focusing on non-stoichiometric deposition and others examining the control of stoichiometry and termination in epitaxial films. The use of techniques such as plasma-enhanced ALD and layer-by-layer mean inner potential engineering is being investigated for energy and environmental solutions. Studies are also utilizing tools like X-ray photoelectron spectroscopy and atomic scale imaging to analyze thin film growth and oxide interfaces.